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HEMTs have been successfully fabricated on silicon and their thermal resistance evaluated for the first time. A maximum transconductance of 330 mS/mm was obtained with 0.8 mu m gate length and 105 mu m width. The thermal resistance of the HEMTs on Si was 36+or-5 degrees /W with total device thickness of 400 mu m, demonstrating that the thermal resistance of GaAs/Si is about half that of GaAs/GaAs...
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