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Electric field effect (EFE) in ferromagnetic/oxide dielectric structures provides a new route to control domain wall (DW) dynamics with low power dissipation. However, EFE on DW velocity has been only observed so far in the creep regime where DW velocity is low due to a strong interaction with pinning sites. Our approach makes use of CoFeB-MgO films with perpendicular magnetic anisotropy (PMA), which...
Using pure electric voltages instead of magnetic fields or large currents to manipulate magnetisms in multiferroic heterostructures is a goal for future low-power spintronics such as electric-writing magnetic-reading memories. Usually, the electric manipulation to magnetism shows a volatile effect which cannot be used for information storage,[1] because the magnetic variation vanishes after the electric...
Spin transfer torque magnetic random access memory (STT-MRAM) is recommended as one of the promising candidates for nonvolatile memory technologies. Compared with traditional memory technologies, STT-MRAM demonstrates low power consumption, fast access speed and infinite endurance, while the storage capacity reported so far has not been that large in contrast with SRAM or DRAM. Considering this, multi-level...
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