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Benefitting from its non-volatility, low power, high speed, nearly infinite endurance, good scalability and great CMOS compatibility, magnetic tunnel junction (MTJ) embedded in conventional CMOS logic circuits has been proposed as one potentially powerful solution to introduce non-volatility in today's programmable logic circuits, which is envisioned to extend the Moore's law [1].
In current big data era, the limited data bandwidth (memory wall) between the processor and the memory becomes one of the most critical bottlenecks for conventional Von-Newman computer architecture.
Using pure electric voltages instead of magnetic fields or large currents to manipulate magnetisms in multiferroic heterostructures is a goal for future low-power spintronics such as electric-writing magnetic-reading memories. Usually, the electric manipulation to magnetism shows a volatile effect which cannot be used for information storage,[1] because the magnetic variation vanishes after the electric...
Spin transfer torque magnetic random access memory (STT-MRAM) is recommended as one of the promising candidates for nonvolatile memory technologies. Compared with traditional memory technologies, STT-MRAM demonstrates low power consumption, fast access speed and infinite endurance, while the storage capacity reported so far has not been that large in contrast with SRAM or DRAM. Considering this, multi-level...
As the CMOS technology scales down, the leakage power becomes a critical barrier for high-performance processors. In addition, the separated processor and storage units in the classic Von-Neumann architecture limit the development of advanced computer design. Spintronics is an emerging platform for nonvolatile memory and logic circuit designs [1-2]. The nonvolatility of spintronics can reduce greatly...
Current-induced spin-transfer torque (STT) is a mainstream method of switching the magnetization of free layer of magnetic tunnel junctions (MTJs) [1-2]. However, currently STT-MTJ is suffering from speed and energy bottlenecks caused by two tradeoffs: firstly, since the critical write current (Ic0) is proportional to the thermal stability barrier (Δ), it is difficult to reduce Ic0 without decreasing...
The Kondo effect, one of the most interesting topics in condensed matter physics, shows significant influences on the transport behaviors in magnetic tunnel junctions (MTJs).[1] As we know that there is a competition between electron tunneling and Kondo scattering in MTJs.[2] However, it is not clear how Kondo effect will affect the transport properties of a multiferroic tunnel junction (MFTJ), a...
Recent progress lead spin-transfer torque magnetic tunnel junctions (STT-MTJs) to emerge as a breakthrough for embedded and standalone non-volatile memory [1]. A peculiarity of this technology, however, is its stochastic switching nature [2]. In memory applications, the randomness of the delay to program from a memory state to another requires designing programming times with high safety margins,...
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