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A low temperature (LT) MO TiN process has been developed to improve the bottom step coverage of MOCVD TiN film. The film properties, including film composition, grain orientation, and structure, have been characterized and are similar to the film properties of the original 405degC MO TiN process. It was also demonstrated that there is no negative impact of LT MO TiN on the iLB/W CVD fill/WCMP integration...
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