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Channel random discrete doping (RDD), one of the main sources of MOSFET intrinsic parameter fluctuations, significantly affects the stability of CMOS SRAM. This paper describes a behavioural model for 35 nm CMOS technology SRAM cells with random discrete dopants using VHDL-AMS (Analogue and Mixed Signal). The static transfer characteristic (STC) is described in the VHDL-AMS model. Monte Carlo simulation...
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