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The characteristics and conductive mechanism of Ta/SiNx/Ta:SiNx/SiNx/Pt resistive random access memory (RRAM) are investigated. Compared with Pt‐doped devices with the same structure, the Ta‐doped devices produce lower operation current in a high resistance state and a larger on/off radio. Furthermore, reliability tests show that the Ta‐doped RRAM has good data retention ability and endurance. Ta...
In this paper, the resistive switching phenomena in CMOS‐compatible Ta/SiNx/Pt devices with different nitrogen concentrations are investigated. The SiNx resistance random‐access memory (RRAM) devices show self‐compliance RS characteristics with low operation voltage. This paper suggests that a dendric Si dangling‐bond conductive channel and a nitrogen‐rich SiNx layer formed at the Ta/SiNx interface...
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