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In this paper, our work on heteroepitaxial SiC films deposited on single-crystalline (111) silicon by hot filament chemical vapor deposition (HFCVD) at low temperature of 800 degC is reported. The surface topography of SiC films on Si substrate were analyzed by atomic force microscope (AFM). The characteristics and crystallinity of the SiC film were examined by X-ray diffractometer (XRD) and Fourier...
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