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In this study, hetero‐epitaxy of GaSe epilayers on a c‐sapphire substrate achieved using molecular beam epitaxy was demonstrated. The GaSe epitaxial growth was monitored using in situ reflection high‐energy electron diffraction (RHEED). Streak RHEED patterns showed a flat and highly crystalline situation. Furthermore, two RHEED patterns were observed after 15 min of growth, and they were correlated...
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