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In this paper, the two Negative Bias Temperature Instability (NBTI) framework components are divided with interface trap generation (Δ Vit) and hole trapping in pre-existing defects (Δ Vht). The threshold voltage shift (ΔVT) contribution is verified by two divided components and studied independently. The impact of inter layer (IL) thickness is simulated under NBTI stress using technology computer-aided...
With the technology scaling, cell-to-cell interference becomes larger in NAND flash memories. This makes it challenging to obtain narrow threshold voltage ($\text{V}_{\mathrm{ th}})$ distribution in two times nanometer floating gate technologies. Moreover, $\text{V}_{\mathrm{ th}}$ distribution is further degraded after experiencing program and erase (P/E) cycles, impeding reliable operations...
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