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Silicon carbide (SiC) foam prepared by polymer infiltration and pyrolysis (PIP) process was further densified with β‐SiC by chemical vapor infiltration (CVI) technique. Scanning electron microscopy and high‐resolution transmission electron microscopy images confirmed the presence of highly entangled and branched in situ grown SiC wires of uniform diameter (∼500 nm) over the struts of open‐cell SiC...
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