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We investigate atmospheric neutron effects on floating gate cells in MLC NAND Flash memories. Loss of information is shown to occur especially at the highest program levels, but to an extent that does not challenge current error correction capabilities. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size. A large spread...
Atmospheric neutrons can interact with the matter inside a microelectronic chip and generate ionizing particles, which in turn can change the state of one or more memory bits [soft error (SE)]. In this letter, we show that SEs are possible in Flash memories, although with extremely low probabilities. While this problem will increase for future technologies, we do not expect SEs to be the reliability...
Radiation effects have been traditionally studied for niche applications such as the high energy physics or the satellite industry, but modern semiconductor technologies are becoming more and more sensitive to ground-level events such as those generated by atmospheric neutrons. Floating Gate memories are not exception: a single ion crossing a Floating Gate array can severely degrade the information...
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