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Nickel induced lateral crystallization of amorphous silicon with and without electric field has been studied. Dendritic silicon growth behavior is observed, with crystallites of a few hundred nanometers in width and up to a few microns in length. The behavior can be understood from the preferential epitaxial growth of silicon from the (111) facets of the NiSi 2 precipitate, which forms during...
Field aided lateral crystallization of amorphous silicon has been carried out at 500 o C with an electric field of 200 V/cm. Scanning electron microscopy and optical microscopy show that large crystalline silicon grains with sizes over 100 μm have been formed in the laterally crystallized region. Raman spectroscopy shows that the large grain with size over 100 μm has a crystalline phase. The...
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