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We have deposited cluster-free P-doped a-Si:H films using SiH4+PH3 multi-hollow discharge plasma CVD method. We have measured dependence of a deposition rate and SiH emission intensity on a gas flow rate ratio R=[PH3]/[SiH4]. The increase of deposition rate with R is much larger than that of SiH emission intensity. These results suggest PHx radicals enhance surface reaction probability of SiH3 radicals...
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