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Lateral depletion-mode 4H-SiC n-channel junction field-effect transistors (JFETs) are demonstrated to operate with well-behaved electrical characteristics at temperatures up to 600 °C in air. Ti/Ni/TiW metal stacks are used to form ohmic contacts to n-type 4H-SiC with specific contact resistance of \(1.14 \times 10^{-3}~{\boldsymbol{\Omega }}\) cm\(^{2 }\) at 600 °C. The on/off drain saturation...
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