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Four-channel surface-illuminated photodiodes monolithically integrated in one array chip are fabricated for 100Gbps Ethernet. The photodiode with an optimized distributed Bragg reflector has a 3dB bandwidth of 25GHz and the highest responsivity of 0.92A/W at a 1.3μm wavelength.
We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).
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