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We fabricated a coaxial high-current InGaAs/InP p-i-n photodiode module using a small-sized TO-can package with a diameter of 4.8 mm, and demonstrated an RF power output of 25.2 dBm at a frequency of 5 GHz.
Four-channel surface-illuminated photodiodes monolithically integrated in one array chip are fabricated for 100Gbps Ethernet. The photodiode with an optimized distributed Bragg reflector has a 3dB bandwidth of 25GHz and the highest responsivity of 0.92A/W at a 1.3μm wavelength.
We report the 1.27 μm AlInAs APD with high responsivity of 0.93 A/W and wide bandwidth of 8.3 GHz at a multiplication factor of 10 optimized for 10G-EPON (OLT).
We proposed a high-current backside-illuminated InGaAs/InP p-i-n photodiode (PD) with a non-absorbing drift region, and demonstrated an RF power output of 29.0 dBm at 5 GHz, a 3-dB bandwidth of 7 GHz, and a third order intercept point of 31 dBm at 2 GHz using a 70-mum-diameter PD.
The InAlAs avalanche photodiodes that employ a guardring-free structure demonstrate record high reliability of over 10000 hours at a high temperature of 200degC with no degradation in the surfaced pn-junction.
A quasi-planar AllnAs avalanche photodiode (APD) with a lateral n-p-n structure for optical fibre communications is reported. Although both the anode and the cathode contact the n-type regions, it is demonstrated that the n-p-n APD has the same performance as a normal p-n APD. The n-p-n structure enables the p-type conversion process of thermal Zn diffusion to be omitted, and AlInAs with a large gain...
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