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The relative low hole mobility of p‐channel building block device challenges the continued miniaturization of modern electronic chips. Metal‐semiconductor junction is always an efficient strategy to control the carrier concentration of channel semiconductor, benefiting the carrier mobility regulation of building block device. In this work, complementary metal oxide semiconductor (CMOS)‐compatible...
Field‐Effect‐Transistors
Metal‐semiconductor junction is an efficient structure to control the carrier concentration of channel semiconductors, benefiting to the regulation of carrier mobility. In article number 2102323, Lei Liao, Johnny C. Ho, Zai‐xing Yang, and co‐workers demonstrate that by simply constructing the metal‐semiconductor junctions, the peak hole mobility of GaSb nanowire field‐effect‐transistor...
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