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The influence of light illumination on the programming of a capacitor floating gate memory based on Ge nanocrystals in HfO2 was studied. The capacitor was fabricated on a c-Si substrate by magnetron sputtering deposition of a layer sequence of HfO2/Ge-HfO2/HfO2 and post-growth rapid thermal annealing for nanocrystals formation at 600 oC. The illumination of the structure was performed through a semi-transparent...
The electrical and photosensing properties correlated with structure and morphology of TiO2/(GeSi/TiO2)2 multilayers are investigated. The multilayers are prepared by magnetron sputtering followed by rapid thermal annealing. Studies of Raman spectroscopy, transmission electron microscopy and X-ray diffraction are carried out. Measurements of dark current versus voltage and temperature are done. The...
The need to improve the electronic, thermo-electric or optic device performance as well as an all-Si based integration has significantly increased the requirements for Si/SiGe material. The introduction of strain in Si(Ge), which induces strong energy band modification and through this enhance carrier mobility and absorption/emission properties, has been the dominant technique to enhance the Si(Ge)...
GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.
The temperature dependence of the conductivity (between 15 and 300 K) and optical transmission spectra (between 0.8-3.5 μm) have been measured on r.f.-sputtered Si 100-x Ni x with 0=<x=<15. The films were characterized by Rutherford backscattering spectroscopy and X-ray diffraction. Changes in the optical sub-bandgap structure, with corresponding changes in...
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