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Indium tin oxide (ITO) thin films were deposited onto Si and SiO 2 /Si substrates using a radio frequency sputtering system with a grain size of 30–50 nm and thickness of 270–280 nm. ITO/Si and ITO/SiO 2 /Si sensing structures were achieved and connected to a standard metal-oxide-semiconductor field-effect transistor (MOSFET) as an ITO pH extended-gate field-effect transistor (ITO...
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