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The continuous CMOS performance improvement enhances the interest of the RF CMOS for millimeter wave application. Hence the extension of DC reliability model in the RF domain is becoming critical. Understanding the MOSFET aging influence on the small signal equivalent circuit is a key concern to integrate the RF reliability simulation at compact model level. In this work, an accurate setup which allows...
250GHz SiGe(C) Heterojunction Bipolar Transistor (HBT) is a high performance device with low noise figure and high transconductance particularly required in power RF circuits. Applications are various: 77GHz automotive radars, non invasive imaging in airport for example. In order to achieve such specification, aggressive design leads to use of HBT at high collector current and sometime with VCE bias...
Channel hot-carrier degradation presents a renewed interest in the last NMOS nodes where the device reliability of bulk silicon (core) 40 nm and Input/Output (IO) device is difficult to achieve at high temperature as a function of supply voltage VDD and back bias VBS. A three mode interface trap generation is proposed based on the energy acquisition involved in distinct interactions in all the VGS...
NBTI has been extensively studied to understand physics of degradation in recent years. However, little has been done to find out the lifetime distributions of NBTI at both transistor and product level, which are important in reliability prediction and improvement. In this paper, Monte-Carlo simulation is carried out to study the NBTI lifetime distribution at transistor level. Lognormal distribution...
Self-heating (SH) effects, observed during the development of SOI technology for high performance circuits, raise questions concerning the validity of the extrapolation method used for hot carrier injection (HCI). The integration of buried oxide, with low thermal conductivity, enhances self-heating (SH) in MOS transistor devices submitted to DC HCI stress, and leads to potential erroneous HCI lifetime...
Nowadays the SiO2 layer thickness (tox) is 1.2 nm or less, and the reliability of such ultra-thin oxide layers has become a major concern for continued scaling. Experimental observation of the empirical power law voltage-dependence was reported on ultra-thin oxides as presented in Wu et al. (2002). We have shown that this unexpected dependence could originate from the multi-vibrational excitation...
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