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Program-charge effects in a SONOS Flash cell on the amplitude of random telegraph noise (RTN) are investigated. We measure RTN in 45 planar SONOS cells and 40 floating-gate (FG) cells in erase state and program state, respectively. We find that a SONOS cell has a wide spread in RTN amplitudes after programming, while an FG cell has identical RTN amplitudes in erase and program states at the same read-current...
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