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High-rate spatial atomic layer deposition (ALD) enables an industrially relevant deposition of high-quality aluminum oxide (Al2O3) films for the surface passivation of silicon solar cells. We demonstrate a homogeneous surface passivation at a deposition rate of ∼30nm/min on 15.6×15.6cm2 silicon wafers of 10nm thick Al2O3 layers deposited in a novel inline spatial ALD system. The effective surface...
We measure surface recombination velocities (SRVs) below 10cm/s on low-resistivity (1.4cm) p-type crystalline silicon wafers passivated with plasma-assisted and thermal atomic layer deposited (ALD) aluminium oxide (Al2O3) films. Ultrathin Al2O3 films (< 5nm) are particularly relevant for the implementation into solar cells, as the deposition rate of the ALD process is very low compared to e.g....
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