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Charged device model pulses may be less than 1 ns wide with peak currents exceeding 10 A. They are a true challenge for the ESD protection of advanced technologies with shrinking safety margins. This paper surveys the characterization with very fast rising single shot TLP pulses and the CDM-like stress, if the square pulse is injected into an integrated circuit via a single pin. Complementing the...
Very-fast high-current pulses that occur during charged device model (CDM) ESD events lead to transient voltage overshoots in forward- and reverse-biased pn-junctions, called forward recovery and dynamic reverse overshoot. To improve the device modeling for CDM circuit simulation of integrated circuits, these effects should be fully understood and should be implemented in the device models. In this...
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