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Ultrahigh vacuum type scanning tunnelling microscopic (UHV-STM) and atomic force microscopic (AFM) measurements showed the existence of long periodical mound and valley shape(∼ 1 μm-period, ∼ 1.5 nm-height) at SiO 2 /Si(001) interface after removing native oxide. This shape was observed at the interface even after the formation of a thick (∼ 150 nm) thermal oxide or a chemical oxide made in...
We report about the formation of grating-like 2 1 and 1 2 domain structures, where stripe-shape mounds and troughs with monoatomic step height difference appear alternately and cover the entire terrace part with quite uniform periodicity, on Si(001) wafer which has very small miscut angle and high P dopant concentration. The mechanism of the formation of such stripe-shape domains was considered...
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