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Growth of large-grain polycrystalline silicon has been demonstrated using silicide-mediated crystallization of amorphous silicon (a-Si) by a pulsed rapid thermal annealing (RTA). The Ni atoms in concentration of 4.6x10 12 /cm 2 on the a-Si surface were heated at 700 o C in the RTA system for 10 s, ten times with 60 s intervals between the heat pulses. The Ni atoms on a-Si...
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