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Preparation of large size, few-layered (FL) 2D materials is one of the challenging problems in material science. In this study, an anisotropic etching method to prepare FL (5–7 layer) MoO3 with width of tens of microns and length exceeding 100 μm on SiO2 was developed. Anisotropic etching along [100] direction was found to be accelerated in high concentration KOH solution. The first few layer on SiO...
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