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This paper presents the experimental result of a fabricated prototype with 3-μm-diameter Au cone-bump connections with adhesive injection, and compares it with that of an indium microbump (μ-bump). The resistance of the 3-μm-diameter Au cone bump is approximately 0.25 Ω. We also investigated the influence of stress caused by bump junction on the MOS characteristics.
We present the development of Superconducting Tunnel Junction (STJ) detectors as a far-infrared single photon spectrometer, which is motivated for an application to a search for the radiative decay of the cosmic neutrino background (CνB). The photon energy spectrum from the radiative decays of CνB is expected to have a sharp edge at high energy end in a far-infrared region ranging from 14 meV to 25...
We have been developing a monolithic active pixel sensor with the silicon-on-insulator (SOI) CMOS technology for use in future X-ray astronomical satellite mission. Our objective is to replace the X-ray Charge Coupled Device (CCD), which is the standard detector in the field, by offering high coincidence time resolution (∼ 50 ns), superior hit-position readout time (∼ 10 μs), and wider bandpass (0...
We have been developing a monolithic active pixel sensor with the silicon-on-insulator (SOI) CMOS technology for use in future X-ray astronomical satellite missions. This sensor is called XRPIX. Our objective is to replace the X-ray CCD, which is currently the standard detector in the field, with the developed XRPIX, which offers high coincidence time resolution ( 50 ns), superior hit-position...
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