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Ge-doped SiO 2 films were deposited on p-Si substrates by magnetron sputtering and metal-insulator-semiconductor (MIS) structures were fabricated with semitransparent Au layers on SiO 2 films. The MIS structures exhibit electroluminescence (EL) peaked at 590 nm. The positions of the EL peaks from the samples with different Ge nanocrystal sizes keep unchanged. The maximal peak intensity...
Photoluminescence (PL) spectra of Ge-SiO 2 co-sputtered films annealed under O 2 , N 2 , and air were examined using the 250 nm excitation line of Xe lamp. Violet and ultraviolet PL peaks were observed at ~400 and ~300 nm. The two peaks were found to have a similar behavior with annealing temperature. Their maximal intensities appear in the sample annealed at 800 o ...
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