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The development of type-II InAs/GaSb superlattice (SL) detectors with nBn and pin designs for the long-wave infrared (LWIR) spectral region is discussed. The dependence of dark current density and responsitivity of the pin photodetectors on doping type and level is investigated, and it is shown that dark current density decreases while responsivity and detectivity increase by p-doping the absorbing...
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