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The development of hybrid magnetic-CMOS circuits such as MRAM (magnetic RAM) and magnetic logic circuit requires efficient simulation models for the magnetic devices. A macro-model of magnetic tunnel junction (MTJ) is presented in this paper. This device is the most commonly used magnetic components in CMOS circuits. This model is based on spin-transfer torque (STT) writing approach. This very promising...
In this paper, we propose a new structure of FPGA based on MRAM technology; we name it MFPGA (magnetic FPGA). FPGA based on SRAM technology has been developed in the last years, because of its high speed and near limitless number of reprogramming, however SRAM is volatile thereby the configuration information and the intermediate data will be lost when power is turned off. By using MTJs (magnetic...
In this paper, the paper propose a new non-volatile FPGA circuit based on spin-RAM technology (spin transfer torque magnetisation switching RAM), new generation of MRAM (magnetic RAM). This spin-RAM based FPGA circuit could process securely the information in low power dissipation and high speed; meanwhile all the data processed are stored permanently in the distributed spin-RAM memory. In this non-volatile...
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