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GaMnAs layers were grown by MBE on GaAs (001) substrates. The structural properties of the epilayers were studied by atomic force microscopy, secondary ion mass spectroscopy, high-resolution X-ray diffraction, and Raman spectroscopy. Photoreflectance spectra at room temperature exhibited Franz–Keldysh oscillations; from an analysis of these oscillations we obtained the built-in internal electric field...
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