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An overview is given of the hybrid AlGaInAs-silicon platform where InP active and silicon passive components are integrated using wafer bonding. Hybrid optical amplifiers and lasers demonstrate the functionality this platform bring silicon photonics.
We report a distributed Bragg reflector silicon evanescent laser operating continuous wave at 1596 nm. The lasing threshold and maximum output power are 65 mA and 11 mW, respectively. The device generates open eye-diagrams under direct modulation at data rates up to 4 Gb/s.
Optical amplifiers are important elements of photonic integrated circuits. We present a hybrid silicon evanescent amplifier utilizing a wafer bonded structure of silicon waveguide and AlGaInAs quantum wells. A chip gain of 13 dB with a power penalty of 0.5 dB at 40 Gb/s data amplification is demonstrated.
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