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A 60 GHz double-balanced mixer for direct upconversion using standard 90 nm CMOS technology is reported. The up-conversion mixer comprises an enhanced double-balanced Gilbert cell with current injection for power consumption reduction, and negative resistance compensation for conversion gain (CG) enhancement, a Marchand balun for converting the single LO input signal to differential signal, and another...
In this work, we investigated the effects of drift region resistance on the temperature behaviors of RF power LDMOS transistors. Devices with various implant doses in the drift region were fabricated. Owing to the quasi-saturation effect, the transconductances at high gate voltages are less dependent on the temperature for low-drift-dose device. In addition, the maximum oscillation frequency exhibits...
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