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The development of a chemical vapor deposition (CVD) process for very thick silicon carbide (SiC) epitaxial layers suitable for high power devices is demonstrated by epitaxial growth of 200µm thick, low doped 4H–SiC layers with excellent morphology at growth rates exceeding 100µm/h. The process development was done in a hot wall CVD reactor without rotation using both SiCl 4 and SiH 4...
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