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Growth of 4H epilayers has been achieved by chemical vapour deposition on various substrate orientations which were on-(0001) oriented, off axis (3.5°- and 8°-off towards the (1120) direction) and a-cut, both (1120) and (1010)-oriented material. Various characterisation techniques have been used to assess the epilayer quality such as optical microscopy, X-ray diffraction, and mainly photoluminescence...
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