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Increasing data needs much larger memory capacity. One of the Flash Memory Solution is Vertical NAND (V-NAND) Flash Memory. In order to fabricate this device, a high aspect ratio hole must be made in the channel hole through the etching process after multilayer thin film deposition. In order to obtain high aspect ratio etch, process condition should have high RF power, high flow rate of polymer gas,...
A room temperature refining process using a new acidic mixture was investigated for the purification of metallurgical grade-silicon (MG-Si) with an average particle size of 617μm. MG-Si typically contains precipitated metal impurities, such as iron (Fe), aluminum (Al) and titanium (Ti), in the triple points of grain boundaries. These metal impurities tend to concentrate within the laminar structure...
Silicon (Si) nanoparticles were synthesized using a double tube reactor and inductive coupled plasma (ICP), and their microstructures with various process conditions were investigated in terms of plasma density and residence time of reactive gas in the plasma zone. Homogeneous amorphous or single crystalline Si nanoparticles were synthesized depending on applied power to ICP coil. The SiH4 flow rate...
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