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GaN nanochestnuts with numerous nanorods and nanoneedles were synthesized on AlN/Si(111) substrate using hydride vapour phase epitaxy (HVPE) method under constant N 2 carrier gas flow rate. The formation process of nanochestnuts was systematically investigated and discussed on the basis of the experimental results. The nanochestnuts were analyzed by field emission scanning electron microscopy...
We grew one-dimensional GaN nanoneedles on AlN/Si(111) substrates at HCl/NH 3 gas-flow ratios of 1/20, 1/30, and 1/50 using the hydride vapor-phase epitaxy (HVPE) method. Field emission-scanning electron microscopy (FE-SEM) images of GaN nanoneedles show that the vertical growth rate of GaN nanoneedles increases with increasing gas-flow ratio, but there is little growth in the lateral direction...
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