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Photoluminescence (PL) imaging identifies contamination occurring in thermal oxidation of p-type crystalline silicon. PL images indicate that the contamination decreases the carrier lifetime from ∼350 to 50 μs and that it is radially symmetric with a diameter of ∼10 mm. By imaging before and after wafers are “light soaked,” the contamination is shown to include Fe, and its net concentration is quantified...
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