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Voltage controlled magnetic tunnel junction (VC-MTJ) is fast as well as low power nonvolatile memory and it is expected to replace embedded (e-) working memory like SRAM.
We fabricated Fe/MgO/Gd magnetic tunnel junctions (MTJs) on a MgO(100) substrate by molecular beam epitaxy. Gd thin films were deposited onto an MgO(100) single crystal barrier. Crystal structure and magnetization of the Gd layers were studied by in situ reflection high-energy electron diffraction and a SQUID (superconducting quantum interference device) magneto-meter, respectively. We observed magnetoresistance...
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