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In this paper we present the advances on the fabrication of THz emitters and detectors obtained within the framework of the European ROOTHz project. Two types of devices are explored, self-switching diodes and slot-diodes, using both narrow bandgap and wide bandgap semiconductors. This broad approach allows us to improve the frequency and power generated by Gunn diodes and the responsivity and noise...
Terahertz (THz) technology has recently attracted much attention due to a very broad range of potential applications, such as security and medical imaging, radio astronomy, and ultra-fast electronics for future generation computation and communications. However, the THz field is still largely unexploited due to the bottleneck issue that is the lack of compact, solid-state, room-temperature emitters...
Terahertz (THz) technology has recently attracted much attention due to a very broad range of potential applications, such as security and medical imaging, radio astronomy, and ultra-fast electronics for future generation computation and communications. However, the THz field is still largely unexploited due to the bottleneck issue that is the lack of compact, solid-state, room-temperature emitters...
Terahertz (THz) technology has attracted rapidly increasing attention due to a very broad range of potential applications, e.g., medical imaging and homeland security. Perhaps more importantly, developing electronic devices capable of operating at THz frequencies will have great impact on future generation computation and communication. Despite enormous effort in recent years, THz field is still largely...
By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar GaN nanodiodes for the development of Gunn oscillations. For channel lengths about 1 μm, oscillation frequencies around 400 GHz are predicted, reaching more than 600 GHz for 0.5 μm. The DC to AC conversion efficiency is found to be higher than 1% for the fundamental and second harmonic frequencies in GaN diodes...
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