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Neutron irradiation induced defects and their effects on the carrier concentration of GaN epilayers are investigated with Raman scattering and X-ray diffraction techniques. Relative to the as-grown sample, the neutron-irradiated samples exhibit a clear variation in the position and lineshape of the A1(LO)-mode Raman peak as well as in the full-width at half-maximum height (FWHM) of the XRD rocking...
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