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We report, for the first time, the benefit of RF burn-in at power levels significantly higher than the nominal handling capacity of micro-electromechanical capacitive switches. The benefit appears to be permanent, so that, after burn-in, the switches remain less vulnerable to dielectric charging and, presumably, more reliable. It was speculated that high RF power permanently changed the bond configuration...
RF power, when approaching the handling capacity of microelectromechanical capacitive switches, was found to accelerate both the charging and discharging of the dielectric in the switches. The amount of acceleration appeared to be greater than what could be explained by self biasing and self heating. Since the long-term reliability of the switches is limited by dielectric charging, the RF power-handling...
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