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In this paper, we present a detailed analysis of our latest statistical MTJ switching data and STT-RAM chip results. We analyze STT-RAM thermal stability and, for the first time, compare the thermal stability parameter obtained from pulse-width dependence measurements with that obtained from read disturb measurements. We also analyze the scalability of STT-RAM, and compare the properties of STT-RAM...
The fundamental current-carrying capacity of graphene is found to be much higher than tradiational FETs (MOSFETs, pHEMTs, etc), matched only by the I-V nitride HEMTs. Currently, the device structures investigated are rather primitive and do not allow for efficient heat removal - similar effects were observed for CNTs a decade ago. However, with top-gate technology (for high 2D carrier densities with...
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