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In order to explain the phenomenon of negative capacitance (NC) in light emitting diodes LEDs, we present a new model based on local strong recombination in active region and firstly deduce the analytic expression of NC from continuity equation. The theoretical result indicates that the NC effeci becomes stronger when the carrier recombination rate increases in a certain range, which is consistent...
The experimental study on negative capacitance (NC) of various light-emitting diodes (LEDs) is presented. Experimental result shows that all LEDs display the NC phenomenon. The voltage modulated electroluminescence (VMEL) experiment confirms that the reason of negative capacitance is the strong recombination of the injected carriers in the active region of luminescence. The measures also verify that...
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