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We report the effect of electronic excitations induced modifications in the ferroelectric polarization in BiFeO3 (BFO) multiferroic films grown on 0.2% Nb doped SrTiO3 (SNTO) substrates by pulsed laser deposition. The BFO/SNTO films were irradiated with 200 MeV Ag+15 ions with ion fluences of 5 × 1010 to 5 × 1012 ions/cm2 and characterized by using X–ray diffraction (XRD), atomic force microscopy...
Indium chalcogenide In2(Te0.975Se0.025)3, In2(Te0.95Se0.05)3 and In2(Te0.9Se0.1) thin films was prepared by thermal evaporation technique in Ar atmosphere. The samples were analyzed by XRD, transmittance spectra, FESEM, DSC and EDS in order to investigate the structural, optical properties, surface morphology, phase identification and elemental composition of the prepared films. XRD spectra reveal...
The present work investigates the local electronic structure of magnetic Fe/MgO/Fe/Co multilayer structure by using angle dependent near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. The multilayer stack was grown on Si(100) substrates using electron-beam evaporation. X-ray diffraction study reveals the polycrystalline nature of different layers in the stack. Transmission electron microscopy...
Polycrystalline bulk samples of PrFe 1−x Mn x O 3 (x = 0.0, 0.1, 0.3, 0.5) were synthesized by solid state reaction method to understand their structural, optical and dielectric properties. X-ray diffraction (XRD) and Raman spectroscopy were investigated to confirm chemical phase and the orthorhombic pbnm structure. As the concentration of Mn increases, the lattice parameter...
SnO 2 thin films prepared by reactive thermal evaporation on glass substrates were subjected to 120 MeV Ag 9+ ion irradiation. The surface topography progression using the swift heavy ion irradiation was studied. It shows creation of unique surface morphologies and regular structures on the surface of the SnO 2 thin film at particular fluences. Field Emission Scanning electron...
The ion irradiation induced crystallization of Ni–Mn–Sn ferromagnetic shape memory alloy (FSMA) thin film is investigated. Thin films of Ni–Mn–Sn FSMA synthesized by DC magnetron sputtering on Si substrate at 200 °C are irradiated by a beam of 120 MeV Ag ions at different fluence varying from 1 × 10 12 to 6 × 10 12 ions/cm 2 . X-ray diffraction pattern reveals that the pristine...
The influence of 120 MeV Ag ion irradiation on the structural and magnetic properties of Ni–Mn–Sn ferromagnetic shape memory alloy thin film is investigated. X-ray diffraction data confirms the phase transformation from martensite to austenite phase at a fluence of 1 × 10 13 ions/cm 2 , which is further supported by the change in surface morphology of the film with increasing fluence...
The polymer blends of Polymethyl Methacrylate/Polystyrene (PS/PMMA) have been irradiated with 28 Si ions of 60 MeV. The percentage transmission of light in the wavelength region of 490 nm has been studied with varying concentration of PS in blend films before and after irradiation. The transmission of light increased on irradiation which may be attributed to the chain scissions of PMMA.
The electret state of a polymer arises from the induced polarization owing to the frozen in phenomenon of electric charges. The study of electret nature using thermally stimulated discharge current (TSDC) technique reveals the nature of various relaxation processes in a polymer. When a polymer is irradiated with high energy ions their dielectric relaxations get affected which can be investigated using...
Pd/p-Si and Pd/n-Si devices were irradiated from 100 MeV gold (7+) ions for varying doses (∼ 10 11 -10 13 ions cm -2 ). The devices were characterized from I-V and C-V studies. It has been found that there is a change of conductivity type i.e. from n to p at a probed depth of ∼ 8 μm which is approximately the stopping range of the gold ions in silicon. A deep...
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