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A transmission electron microscopy (TEM) study on the generation of stacking faults (SFs) and stacking fault (SF) induced inclusion during 3C-SiC growth by Continuous Feed Physical Vapour Transport (CF-PVT) method on 4H-SiC substrates is presented. A transition region of about 100nm between the 4H-SiC substrate and 3C-SiC layer, where cubic and 4H-SiC sequences follow after each other is observed...
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