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Blanket and selective Ge growth on Si is investigated using reduced pressure chemical vapor deposition. To reduce the threading dislocation density (TDD) at low thickness, Ge deposition with cyclic annealing followed by HCl etching is performed. In the case of blanket Ge deposition, a TDD of 1.3×10 6 cm −2 is obtained, when the Ge layer is etched back from 4.5μm thickness to 1.8μm...
Epitaxial Ge layer growth of low threading dislocation density (TDD) and low surface roughness on Si (100) surface is investigated using a single wafer reduced pressure chemical vapor deposition (RPCVD) system. Thin seed Ge layer is deposited at 300°C at first to form two-dimensional Ge surface followed by thick Ge growth at 550°C. Root mean square of roughness (RMS) of ∼0.45nm is achieved. As-deposited...
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