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ZnO films were prepared using radio frequency magnetron sputtering on Si(111) substrates that were sputter-etched for different times ranging from 10 to 30min. As the sputter-etching time of the substrate increases, both the size of ZnO grains and the root-mean-square (RMS) roughness decrease while the thickness of the ZnO films shows no obvious change. Meanwhile, the crystallinity and c-axis orientation...
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