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Si-nanocrystals (Si-NCs) embedded nitride-oxide-semiconductor (NOS) structure is fabricated by plasma enhanced chemical vapor deposition (PECVD) and post annealing technique. Charging effect in the floating gate structure is then characterized by Kelvin probe force microscopy (KPFM) at the nanoscale. The stored charge density is calculated by an electrostatic analysis, which is on the magnitude of...
CdS polycrystalline thin films were fabricated by magnetron sputtering and the influence of substrates, sputtering powers, pressures, and substrate temperatures on the structure of thin films is investigated. The films deposited on substrates of glass, quartz, SnO2: F and p-type single silicon are hexagonal phase and they grow preferentially along (002) planes. As the radio-frequency power and substrate...
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