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45 nm SOI CMOS technology target for high performance CPU application is reported. Process induced strained CMOS demonstrates 1232/855 uA/um DC Ion at 100 nA/um Ioff under Vdd=lV, which is the highest ever reported performance at 45 nm ground rule for both SOI and bulk technology. Small width PFET reaches record high 975uA/um. High SiGe over Si volume ratio in thin film SOI enables high compressive...
Repeatable manipulation and auto-assembly of nano-scale components is a critical potential for future developments in nano optics, opto-electronics, hybrid microelectromechanical (MEMS) systems, and nano-scale devices. This paper focuses on the fabrication of nano structures using single probe with force feedback. The structures that are fabricated can be used for both rapid prototyping and for replication...
This paper described an integrated system with an atomic force microscope designed for nanomanipulation. Simulation of the nanomanipulation process was accomplished by estimating the interactive forces between molecules of the AFM tip and the sample based on the principle of contact mechanics. The intermolecular force and interactive force between the tip and sample are modeled by the Lennard-Jones...
This paper describes a virtual reality and haptic interface between human and the atomic force microscope (AFM), which allows the operator to sense and touch the surface and nanoparticles during the manipulation with an AFM tip. The tip-sample interaction forces and intermolecular forces between the tip and surface are modeled based on Lennard-Jones potential and JKR theory, respectively. Our objective...
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